收藏本站
MTP23P06V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?Source Breakdown Voltage
V (BR)DSS
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
I DSS
60
?
?
?
?
60.5
?
?
?
?
10
100
Vdc
mV/ ° C
m Adc
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain?Source On?Resistance (V GS = 10 Vdc, I D = 11.5 Adc)
V GS(th)
R DS(on)
2.0
?
?
2.8
5.3
0.093
4.0
?
0.12
Vdc
mV/ ° C
W
Drain?Source On?Voltage
V DS(on)
Vdc
(V GS = 10 Vdc, I D = 23 Adc)
(V GS = 10 Vdc, I D = 11.5 Adc, T J = 150 ° C)
Forward Transconductance
(V DS = 10.9 Vdc, I D = 11.5 Adc)
g FS
?
?
5.0
?
?
11.5
3.3
3.2
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1160
1620
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
380
105
530
210
SWITCHING CHARACTERISTICS (Note 2)
Turn?On Delay Time
t d(on)
?
13.8
30
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 23 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
98.3
41
62
200
80
120
Gate Charge (See Figure 8)
(V DS = 48 Vdc, I D = 23 Adc, V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
38
7.0
18
14
50
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 23 Adc, V GS = 0 Vdc)
(I S = 23 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 23 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.2
1.8
142.2
100.5
41.7
0.804
3.5
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
L D
nH
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25 ″ from package to center of die)
?
3.5
4.5
?
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L S
?
7.5
?
nH
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MTP2955V MOSFET P-CH 60V 12A TO-220AB
MTP2P50E MOSFET P-CH 500V 2A TO-220AB
MTP3055VL MOSFET N-CH 60V 12A TO-220AB
MTP3055VL MOSFET N-CH 60V 12A TO-220
MTP3055V MOSFET N-CH 60V 12A TO-220AB
MTP36N06V MOSFET N-CH 60V 32A TO-220AB
MTP50P03HDL MOSFET P-CH 30V 50A TO-220AB
MTPD1346-010 PIN DIODE 1300NM FLAT 2.8MM TO46
相关代理商/技术参数
MTP24K11 功能描述:插线板 1DC PANEL 11 UNWIR RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48
MTP24K11B 功能描述:插线板 IDC PANEL 11 WIRED RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48
MTP24K7 功能描述:插线板 7 X 6 UNWRD IDC WA RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48
MTP2603G6 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2603N6 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2603Q6 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP27N06L 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MTP27N10E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM